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A Product Line of
Diodes Incorporated
ZXMN20B28K
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Symbol
V DSS
V GS
Value
200
± 20
Unit
V
V
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Repetitive Avalanche Energy
Repetitive Avalanche Current
(Note 7)
(Note 7)
(Note 4)
(Note 4)
E AS
I AS
E AR
I AR
73
5.5
4.5
5.5
mJ
A
mJ
A
Continuous Drain current
V GS = 10V
(Note 3)
T A = 70 ° C (Note 3)
I D
2.3
1.8
A
(Note 2)
1.5
Pulsed Drain current
V GS = 10V
(Note 4)
I DM
17.3
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
(Note 4)
I S
I SM
5.7
17.3
A
A
Thermal Characteristics
Characteristic
(Note 2)
Symbol
Value
4.3
34.4
Unit
Power dissipation
Linear derating factor
(Note 3)
P D
10.2
76.0
W
mW/ ° C
(Note 6)
(Note 2)
2.2
17.4
29.1
Thermal Resistance, Junction to Ambient
(Note 3)
R θ JA
12.3
° C/W
(Note 6)
57.3
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 5)
R θ JL
T J , T STG
1.15
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. UIS in production with L = 4.83mH, I AS = 5.5A, R G = 25 ? , V DD = 100V, starting T J = 25°C.
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
2 of 8
www.diodes.com
October 2009
? Diodes Incorporated
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